1 / 6 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 september 20 1 1 as f240 5 - 10 00 mhz mmic amplifier parameters units typical frequency mhz 70 150 300 450 gain db 26.4 26.3 26 25.6 s11 db - 14 - 15 - 15 - 15 s22 db - 10 - 11 - 10 - 9 output ip3 1) dbm 40.5 41 38 34.5 noise figure db 3.0 3.0 3.1 3.1 output p1db dbm 20 20.5 2 0.5 20 current ma 114 114 114 114 device voltage v 4.9 4.9 4.9 4.9 1) oip3 is measured with two tones at an output power of +6 dbm/tone separated by 1 mhz. parameters units min typ max testing frequency mhz 150 gain db 25 26.3 s11 db - 12 - 15 s22 db - 9 - 11 output ip3 dbm 38 41 noise figure db 3.0 3.3 output p1db dbm 19.5 20.5 current ma 102 114 125 device voltage v 4.9 parameters rating operating case temperature - 40 to + 85 c storage temperature - 40 to + 150 c device voltage +5.5 v operating junction temper a ture + 150 c input rf power ( c ontinuous) 22 dbm * please find the max. input power data from http://www.asb.co.kr/pdf/maximum_input_power_analysis. pdf feature s description typical perfor m ance absolute maximum ratings 26.3 db gain at 150 mhz 20.5 dbm p1db a t 150 mhz 41 dbm output ip3 at 150 mhz 3.0 db nf at 150 mhz mttf > 100 years single supply the ASF240, a if gain block amplifier mmic, has a high linearity , high gain, and high eff i ciency over a wide range of frequency, being sui t able for use in both receiver and transmitter of telecommunication sy s tems up to 1 ghz. the amplifier is available in a n sot - 89 package and passes through the stri n- gent dc, rf, and reliability tests. product specifications ASF240 package style: sot - 89 pin configuration pin no. function 1 rf in 2 gnd 3 rf out / bias application circuit if (50 ~ 500mhz) if (5 ~ 30mhz) 50 ~ 1000 mhz (75 ohm) 5 ~ 200 mhz (75 ohm)
2 / 6 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 september 20 1 1 as f240 5 - 10 00 mhz mmic amplifier pin no. function 1 rf in 2 gnd 3 rf out / bias mounting recommendation (in mm) outline drawing note : 1. the number and size of ground via holes in a circuit board is critical for thermal and rf grounding consi d erations. 2. we recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better rf and thermal performance, as shown in the drawing at the left side. esd classification hbm class 1b voltage level: 500 v~1000 v mm class a voltage level: <200 v caution: esd - sensitive device! moisture sensitivity level (msl) level 3 at 260 c reflow esd classification & moisture sensitivity level symbols dimensi ons (in mm) min nom max a 1.40 1.50 1.60 l 0.89 1.04 1.20 b 0.36 0.42 0.48 b1 0.41 0.47 0.53 c 0.38 0.40 0.43 d 4.40 4.50 4.60 d1 1.40 1.60 1.75 e 3.64 --- 4.25 e1 2.40 2.50 2.60 e1 2.90 3.00 3.10 h 0.35 0.40 0.45 s 0.65 0.75 0.85 e 1.40 1.5 0 1.60 as f240 pxxxx lot no. part no.
3 / 6 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 september 20 1 1 as f240 5 - 10 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +6 dbm/tone separated by 1mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 70 150 300 450 magnitude s21 (db) 26.4 26.3 26 25.6 magnitude s11 (db) - 14 - 1 5 - 15 - 15 magnitude s22 (db) - 10 - 11 - 10 - 9 output p1db (dbm) 20 20.5 20.5 20 output ip3 1) (dbm) 40.5 41 38 34.5 noise figure (db) 3.0 3.0 3.1 3.1 device voltage (v) 4.9 4.9 4.9 4.9 current (ma) 114 114 114 114 if 50 ~ 500 m hz +5 v rf in rf out ASF240 c3=100 pf c4=1 m f d1=5.6v zener diode c1=1000 p f c2=1000 p f l1=1.2 mh vs=5 v d r =1 w 0 100 200 300 400 500 0 5 10 15 20 25 30 gain (db) frequency (mhz) 0 100 200 300 400 500 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 0 100 200 300 400 500 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz)
4 / 6 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 september 20 1 1 as f240 5 - 10 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +6 dbm/tone separated by 1mhz. 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) 0 20 40 60 80 100 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 20 40 60 80 100 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 0 20 40 60 80 100 0 5 10 15 20 25 30 35 gain (db) frequency (mhz) rf in rf out ASF240 c3=100 pf c4=1 m f d1=5.6v zener diode l2=33 mh vs=5 v c1=1 m f c2=1 m f l1=33 mh internal r(l1+l2)=2.3 w board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 5 30 magnitude s21 (db) 26.5 26.5 magnitude s11 (db) - 14 - 15 magnitude s22 (db) - 8 - 9 output p1db (dbm) 20 20 output ip3 1) (dbm) 40 40 noise figure ( db) - 3.0 device voltage (v) 4.75 4.75 current (ma) 108 108 if 5 ~ 30 mhz +5 v
5 / 6 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 september 20 1 1 as f240 5 - 10 00 mhz mmic amplifier . 1) oip3 and oip2 are measured with two tones at an output power of +5 dbm/tone separ ated by 6 mhz. 2) oip2 is measured at f1+f2 frequency. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic application circui t s - parameters catv ( 75 ohm ) 50 ~ 1000 mhz +5 v frequency (mhz) 50 500 860 magnitude s21 (db) 25.4 25.3 24.2 magnitude s11 (db) - 14 - 14 - 14 magnitude s22 (db) - 10 - 11 - 9 output p1db (dbm) 20 19 16.5 output ip3 1) (dbm) 37 32 27.5 output ip2 1),2) (dbm) 44 46 36 noise figure (db) 2.8 2.9 3.1 device voltage (v) 4.8 4.8 4.8 current (ma) 107 107 107 0 100 200 300 400 500 600 700 800 900 1000 0 5 10 15 20 25 30 gain (db) frequency (mhz) 0 100 200 300 400 500 600 700 800 900 1000 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 0 100 200 300 400 500 600 700 800 900 1000 -20 -15 -10 -5 0 s22 (db) frequency (mhz) rf in rf out ASF240 c2=1 m f c1=1 m f l1=390 nh (coil inductor, internal r=2 w ) l2=56 nh r1=200 w vs=5 v c3=100 pf c4=1 m f d1=5.6v zener diode
6 / 6 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 september 20 1 1 as f240 5 - 10 00 mhz mmic amplifier . 1) oip3 and oip2 are measured with two tones at an output power of +5 dbm/tone separated by 1 mhz. 2) oip2 is measured at f1+f2 fr equency. board layout ( fr4, 40x40 mm 2 , 0.8t) sche matic application circuit s - parameters catv ( 75 ohm ) 5 ~ 200 mhz +5 v frequency (mhz) 5 50 200 magnitude s21 (db) 26.3 26.5 26.3 magnitude s11 (db) - 16 - 17 - 18 magnitude s22 (db) - 14 - 20 - 15 output p1db (dbm) 20 20 2 0 output ip3 1) (dbm) 37 39 39 output ip2 1),2) (dbm) 44 47 53 noise figure (db) 3.6 3.4 3.4 device voltage (v) 4.65 4.65 4.65 current (ma) 95 95 95 0 50 100 150 200 250 300 0 5 10 15 20 25 30 gain (db) frequency (mhz) 0 50 100 150 200 250 300 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 0 50 100 150 200 250 300 -30 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) rf in rf out ASF240 c2=0.1 m f c1=0.1 m f r1=8.2 w vs=5 v l1=33 mh l2=33 mh c3=100 pf c4=1 m f d1=5.6v zener diode ceramic inductor, internal r(l1+l2)=3.6 w
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